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| MJD112 MJD117 Complementary power Darlington transistors Features . Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 1 TAB 3 Application Linear and switching industrial equipment TO-252 (DPAK) Description The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. Figure 1. Internal schematic diagram R1 typ. = 15 k R2 typ. = 100 Table 1. Device summary Marking MJD112 MJD117 Polarity NPN PNP Package DPAK DPAK Packaging Tape and reel Tape and reel Order codes MJD112T4 MJD117T4 January 2010 Doc ID 3540 Rev 3 1/10 www.st.com 10 Absolute maximum ratings MJD112, MJD117 1 Absolute maximum ratings Table 2. Symbol VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25 C Storage temperature Max. operating junction temperature 5 2 4 0.05 20 -65 to 150 150 V A A A W C C Value 100 Unit V Note: For PNP types voltage and current values are negative. Table 3. Symbol RthJC Thermal data Parameter Thermal resistance junction-case max. Value 6.25 Unit C/W 2/10 Doc ID 3540 Rev 3 MJD112, MJD117 Electrical characteristics 2 Electrical characteristics Tcase = 25 C; unless otherwise specified. Table 4. Symbol ICEV ICBO ICEO IEBO VCEO(sus)(1) VCE(sat)(1) VBE(sat)(1) VBE(on) hFE(1) Electrical characteristics Parameter Collector cut-off current (VBE = -1.5 V) Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Collector-emitter sustaining voltage (IB = 0) Test conditions VCE = 80 V VCE = 80 V, Tc = 125 C VCB = 80 V VCB = 100 V VCE = 50 V VEB = 5 V IC = 30 mA IB = 8 mA IB = 40 mA IB = 40 mA VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V VCE = 10 V f = 0.1 MHz 100 200 pF pF 500 1000 200 25 100 Min. Typ. MHz 12000 2 V 3 4 2.8 V V Max. 10 0.5 10 20 20 2 Unit A mA A A mA V Collector-emitter saturation IC = 2 A voltage IC = 4 A Base-emitter saturation voltage Base-emitter on voltage IC = 4 A IC = 2 A IC = 0.5 A_ _ DC current gain IC = 2 A_ IC = 4 A_ _ fT Transition frequency IC = 0.75 A_ f = 1 MHz CCBO VCB = 10 V Collector base capacitance for MJD112 (IE = 0) for MJD117 1. Pulse test: pulse duration 300 s, duty cycle 2 % Note: For PNP types voltage and current values are negative. Doc ID 3540 Rev 3 3/10 Electrical characteristics MJD112, MJD117 2.1 Typical characteristic (curves) Figure 2. DC current gain (VCE = 3 V NPN) Figure 3. DC current gain (VCE = - 3 V PNP) Figure 4. DC current gain (VCE = 5 V NPN) Figure 5. DC current gain (VCE = - 5 V PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) 4/10 Doc ID 3540 Rev 3 MJD112, MJD117 Figure 8. Base-emitter saturation voltage (NPN) Figure 9. Electrical characteristics Base-emitter saturation voltage (PNP) Figure 10. Base-emitter on voltage (NPN) Figure 11. Base-emitter on voltage (PNP) Figure 12. Resistive load switching time Figure 13. Resistive load switching time (NPN, on) (PNP, on) Doc ID 3540 Rev 3 5/10 Electrical characteristics MJD112, MJD117 Figure 14. Resistive load switching time Figure 15. Resistive load switching time (NPN, off) (PNP, off) 6/10 Doc ID 3540 Rev 3 MJD112, MJD117 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 3540 Rev 3 7/10 Package mechanical data MJD112, MJD117 TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 8/10 Doc ID 3540 Rev 3 MJD112, MJD117 Revision history 4 Revision history Table 5. Date 21-Jun-2004 21-Jan-2010 Document revision history Revision 2 3 Changes Document migration, no content change. Modified TO-252 (DPAK) mechanical data. Doc ID 3540 Rev 3 9/10 MJD112, MJD117 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 Doc ID 3540 Rev 3 |
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